Metal oxide resistive random access memory based synaptic devices for brain-inspired computing
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چکیده
منابع مشابه
Analog and Digital Switching Characteristics of Transition Metal Oxide Based Resistive Random Access Memory (ReRAM) Devices
Transition Metal Oxide (TMO) Based Resistive Random Access Memory (ReRAM) devices have gathered significant research attention for non-volatile data storage applications. The major advantages lie in terms of scalability, low switching voltages, and process compatibility with the CMOS technologies [1, 2]. However, to take the complete benefit of this enabling technology there are several challen...
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